Si Silicon

Silicon

(

)

Eigenschaften
Transmission Range %	50
Transmission Range	1.2 - 15 µm (thickness 2 mm)
Refractive Index	3.35268 @ 2 µm
Reflection Loss	30.11% @3 µm
Density	2.3291 g/cm³
Melting point	1412°C
Molecular Weight	28.09
Thermal Conductivity	163 W/(m·K) @313K
Spec. Heat Capacity	731.9 J/(kg·K)
Thermal Expansion	2.62 · 10^-6 /°C @300 K
Hardness (Mohs)	1150
Young's Modulus	131 GPa
Shear Modulus	79.9 GPa
Bulk Modulus	102 GPa
Rupture Modulus	130 MPa
Elastic Coefficient	C₁₁ = 167; C₁₂ = 65; C₄₄ = 80 GPa
Dielectric Constant	13 @ f = 9.37 GHz
Solubility in Water	unsoluble
Crystal Structure	single crystal, synthetic
Crystal Type	cubic, diamond structure, a₀ = 5.43086 Å
Cleavage Planes	(111)
Poisson Ratio	0.221
Application	band pass filterx, thermography, ATR crystals, FIR optics, mirrors, Wafer
Remarks	Usually we use Floating Zone Material. For special applications Silicon will be produced at a resistance of >10kΩcm. Max. temperature for application: 300°C. Reacts in combination with HF and HNO3. Unsoluble in acids.
Remarkable	Wide range of applications (Optic and Electronic branch) IR window for 3-5 µm, FIR / Terahertz window, beam splitter, filter substrate Wafer / substrates with different orientations for semiconductor electronics The maximum available diameter depends on the quality (Cz-> 18 ", Fz-> 200 mm) Available in different qualities (FZ = float zone, Cz = Czochralski)

NOTE: Despite careful research, we do not accept any liability for the correctness of the information provided. Liability claims based on the use of the information are excluded in principle.

Si – Silicon: Korth Kristalle - Vom Rohkristall zur hochpräzisen Optik. Durchblick für alle Wellenlängen - Seit 72 Jahren züchten wir Kristalle und fertigen daraus hochpräzise optische Komponenten für alle Wellenlängen vom IR- bis zum VUV-Bereich. Unsere Produkte kommen in allen Bereichen zum Einsatz, in denen eine hochentwickelte, präzise technische Ausstattung unerlässlich ist – von der Analytik bis hin zur Medizin- und Raumfahrttechnik.